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Назва:
Advanced methods of increasing and monitoring the lifetime of nonequilibrium minority charge carriers in master dies for high-performance silicon solar cells
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Статті »
Видавець:
Telecommunications and Radio Engineering
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стаття
Мова документа:
англійська
Додано у архів:
09.09.2013
Зведена інформація по документу:
Kirichenko, M.V. Advanced methods of increasing and monitoring the lifetime of nonequilibrium minority charge carriers in master dies for high-performance silicon solar cells [Текст] / Kirichenko M.V., Zaitsev R.V., Kоpach V.R. // Статті : - Telecommunications and Radio Engineering, 2010.
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The distribution of nonequilibrium minority charge carrier lifetime in the depth of singlecrystal silicon wafers was investigated by the improved method of stationary photoconduction decrease and by the standard method of photoconduction decay. The wafers of p and n type conduction used in hardware products for the electronic engineering were tested. To increase n, p in the near surface regions the wafers were subjected to the gettering annealing and deep chemical etching. Basing on the comparative analysis of resulting n, p values it is proposed to use silicon wafers treated by chemical etching as master dies for domestic manufacture of alternative highperformance multijunction photovoltaic converters with vertical diode cells.


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